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TIP32/32A/32B/32C High Frequency Semiconductor Triode Collector Power Dissipation 2W

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Name: TIP3232A32B32C High Frequency Semiconductor Triode Collector Power Dissipation 2W
Brand: Hua Xuan Yang
Price: 1 USD

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TO-220-3L Plastic-Encapsulate Transistors

TIP32/32A/32B/32C

FEATURE

Medium Power Linear Switching Applications

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol	Parameter	TIP31	TIP31A	TIP31B	TIP31C	Unit
VCBO	Collector-Base Voltage	40	60	80	100	V
VCEO	Collector-Emitter Voltage	40	60	80	100	V
VEBO	Emitter-Base Voltage	5				V
I_C	Collector Current	3				A
P_C	Collector Power Dissipation	2				W
RθJA	Thermal Resistance from Junction to Ambient	62.5
T_j	Junction Temperature	150				℃
Tstg	Storage Temperature	-55~+150				℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless other wise specified)

Parameter		Symbol	Test conditions	Min	M ax	Unit
Collector-base breakdown voltage	TIP31 TIP31A TIP31B TIP31C	V(BR)CBO	I_C= 1mA, I_E=0	40 60 80 100		V
Collector-emitter breakdown voltage *	TIP31 TIP31A TIP31B TIP31C	VCEO(sus)	I_C= 30mA, I_B=0	40 60 80 100		V
Emitter-base breakdown voltage		V(BR)EBO	I_E= 1mA, I_C=0	5		V
Collector cut-off current	TIP31 TIP31A TIP31B TIP31C	ICBO	V_CB=40V, I_E=0 V_CB=60V, I_E=0 V_CB=80V, I_E=0 V_CB=100V, I_E=0		200	μA
Collector cut-off current TIP31/31A TIP31B/31C		ICEO	V_CE= 30V, I_B= 0 V_CE= 60V, I_B= 0		0.3	mA
Emitter cut-off current		IEBO	V_EB=5V, I_C=0		1	mA
DC current gain		hFE(1)	V_CE= 4V, I_C= 1A	25
DC current gain		hFE(2)	V_CE=4 V, I_C= 3A	15	75
Collector-emitter saturation voltage		VCE(sat)	I_C=3A, I_B=0.375A		1.2	V
Base-emitter voltage		VBE(on)	V_CE= 4V, I_C=3A		1.8	V
Transition frequency		f_T	V_CE=10V , I_C=0.5A	3		MHz

* Pulse Test: PW≤300µs, Duty Cycle≤2%.

Typical Characteristics TIP31/31A/31B/31C

TO-126 Package Outline Dimensions

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