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Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V

    Buy cheap Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V from wholesalers
     
    Buy cheap Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V from wholesalers
    • Buy cheap Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V from wholesalers
    • Buy cheap Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V from wholesalers
    • Buy cheap Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V from wholesalers

    Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V

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    Brand Name : Hua Xuan Yang
    Model Number : AP3N10BI
    Certification : RoHS、SGS
    Price : Negotiated
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Delivery Time : 1 - 2 Weeks
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    Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V

    Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V


    N Channel Mosfet Power Working and Characteristics


    The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the heavily doped layer with a low resistive material and the N- layer is a lightly doped layer with the high resistance region.


    N Channel Mosfet Power Features



    VDS= 100V I D=2.8 A



    RDS(ON)< 320mΩ @ VGS=10V


    N Channel Mosfet Power Application


    Battery protection

    Uninterruptible power supply


    Package Marking and Ordering Information


    Product IDPackMarkingQty(PCS)
    AP3N10BISOT23MA43000

    Absolute Maximum Ratings (TC=25 unless otherwise specified)


    SymbolParameterRatingUnits
    VDSDrain-Source Voltage100V
    VGSGate-Sou rce Voltage±20V
    ID@TA=25℃Continuous Drain Current, V GS @ 10V 12.8A
    ID@TA=70℃Continuous Drain Current, V GS @ 10V 11A
    IDMPulsed Drain Current25A
    PD@TA=25 ℃Total Power Dissipation31W
    TSTGStorage Temperature Range-55 to 150
    TJOperating Junction Temperature Range-55 to 150
    RθJAThermal Resistance Junction-ambient 1125℃/W
    RθJCThermal Resistance Junction-Case 180℃/W

    Electrical Characteristics (TJ=25 , unless otherwise noted)


    SymbolParameterConditionsMin.Typ.Max.Unit
    BVDSSDrain-Source Breakdown VoltageVGS=0V , ID=250uA100------V
    △ BVDSS/△TJBVDSS Temperature CoefficientReference to 25℃ , ID=1mA---0.067---V/℃
    RDS(ON)Static Drain-Source On-ResistanceVGS=10V , I D=1A---260310

    VGS=4.5V , I D=0.5A---270320
    VGS(th)Gate Threshold VoltageVGS=VDS , I =250uA1.01.52.5V
    △VGS(th)VGS(th) Temperature Coefficient----4.2---mV/℃
    IDSSDrain-Source Leakage CurrentVDS=80V , VGS=0V , TJ=25℃------1uA
    IDSSDrain-Source Leakage CurrentVDS=80V , VGS=0V , TJ=25℃------5uA
    IGSSGate-Source Leakage CurrentVGS=±20V , VDS=0V------±100nA
    gfsForward TransconductanceVDS=5V , ID=1A---2.4---S
    RgGate ResistanceVDS=0V , VGS=0V , f=1MHz---2.85.6
    QgTotal Gate Charge (10V)---9.713.6
    QgsGate-Source Charge---1.62.2
    QgdGate-Drain Charge---1.72.4
    Td(on)Turn-On Delay Time

    VDD=50V , VGS=10V ,

    RG=3.3

    ID=1A

    ---1.63.2

    ns

    Tr
    Td(off)Turn-Off Delay Time---13.627
    TfFall Time---1938
    CissInput Capacitance---508711
    CossOutput Capacitance---2941
    CrssReverse Transfer Capacitance---16.423
    ISContinuous Source Current 1,4VG=VD=0V , Force Current------1.2A
    ISMPulsed Source Current 2,4------5A
    VSDDiode Forward Voltage2VGS=0V , IS=1A , TJ=25℃------1.2V
    trrReverse Recovery TimeIF=1A , dI/dt=100A/µs ,---14---nS
    QrrReverse Recovery Charge---9.3---nC
    SymbolParameterConditionsMin.Typ.Max.Unit
    BVDSSDrain-Source Breakdown VoltageVGS=0V , ID=250uA100------V
    △ BVDSS/△TJBVDSS Temperature CoefficientReference to 25℃ , ID=1mA---0.067---V/℃
    RDS(ON)Static Drain-Source On-ResistanceVGS=10V , I D=1A---260310

    VGS=4.5V , I D=0.5A---270320
    VGS(th)Gate Threshold VoltageVGS=VDS , I =250uA1.01.52.5V
    △VGS(th)VGS(th) Temperature Coefficient----4.2---mV/℃
    IDSSDrain-Source Leakage CurrentVDS=80V , VGS=0V , TJ=25℃------1uA
    IDSSDrain-Source Leakage CurrentVDS=80V , VGS=0V , TJ=25℃------5uA
    IGSSGate-Source Leakage CurrentVGS=±20V , VDS=0V------±100nA
    gfsForward TransconductanceVDS=5V , ID=1A---2.4---S
    RgGate ResistanceVDS=0V , VGS=0V , f=1MHz---2.85.6
    QgTotal Gate Charge (10V)---9.713.6
    QgsGate-Source Charge---1.62.2
    QgdGate-Drain Charge---1.72.4
    Td(on)Turn-On Delay Time

    VDD=50V , VGS=10V ,

    RG=3.3

    ID=1A

    ---1.63.2

    ns

    Tr
    Td(off)Turn-Off Delay Time---13.627
    TfFall Time---1938
    CissInput Capacitance---508711
    CossOutput Capacitance---2941
    CrssReverse Transfer Capacitance---16.423
    ISContinuous Source Current 1,4VG=VD=0V , Force Current------1.2A
    ISMPulsed Source Current 2,4------5A
    VSDDiode Forward Voltage2VGS=0V , IS=1A , TJ=25℃------1.2V
    trrReverse Recovery TimeIF=1A , dI/dt=100A/µs ,---14---nS
    QrrReverse Recovery Charge---9.3---nC

    Note :

    1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦300us , duty cycle ≦2%

    3.The power dissipation is limited by 150 ℃ junction temperature


    4 .The data is theoretically the same as ID and IDM, in real applications , should be limited by total power dissipation.



    Symbol

    Dimensions in Millimeters
    MIN.MAX.
    A0.9001.150
    A10.0000.100
    A20.9001.050
    b0.3000.500
    c0.0800.150
    D2.8003.000
    E1.2001.400
    E12.2502.550
    e0.950TYP
    e11.8002.000
    L0.550REF
    L10.3000.500
    θ

    Attention


    1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

    2, APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.

    3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.

    4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.

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    8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

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