AP30N10D High Current Transistor , 30A 100V TO-252 Field Effect
Transistor
High Current Transistor types
MOSFETs can be of different types, including:
Depletion Mode: Normally ON. Applying the VGS would turn it OFF.
Enhancement Mode: Normally OFF. Applying the VGS would turn it ON.
N-channel MOSFETs: positive voltages and currents.
P-channel MOSFETs: negative voltages and currents.
Low voltage MOSFETs: BVDSS from 0 V to 200 V.
High voltage MOSFETs: BVDSS greather than 200 V.
High Current Transistor Features
VDS = 100V ID = 30A
RDS(ON) < 47mΩ @ VGS=10V
High Current Transistor usage
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
| Product ID | Pack | Marking | Qty(PCS) |
| AP30N10D | TO-252-3L | AP30N10D XXX YYYY | 2500 |
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 100 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Continuous Drain Current, V GS @ 10V 1 | 30 | A |
| ID@TC=100 ℃ | Continuous Drain Current, V GS @ 10V 1 | 13.5 | A |
| ID@TA=25℃ | Continuous Drain Current, V GS @ 10V 1 | 4.2 | A |
| ID@TA=70℃ | Continuous Drain Current, V GS @ 10V 1 | 3.4 | A |
| IDM | Pulsed Drain Current2 | 45 | A |
| EAS | Single Pulse Avalanche Energy 3 | 36.5 | mJ |
| IAS | Avalanche Current | 27 | A |
| PD@TC=25 ℃ | Total Power Dissipation4 | 52.1 | W |
| PD@TA=25 ℃ | Total Power Dissipation4 | 2 | W |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
| RθJA | Thermal Resistance Junction-ambient 1 | 62 | ℃/W |
| RθJC | Thermal Resistance Junction-Case 1 | 2.4 | ℃/W |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | --- | --- | V |
| △BVDSS / T J | BVDSS Temperature Coefficient | Reference to 25℃ , ID=1mA | --- | 0.098 | --- | V/℃ |
RDS(ON) |
Static Drain-Source On-Resistance | VGS=10V , I D=20A | --- | 38 | 47 |
mΩ |
| VGS=4.5V , I D=15A | --- | 40 | 50 |
| VGS(th) | Gate Threshold Voltage | | 1.3 | --- | 2.5 | V |
| △VGS(th) | VGS(th) Temperature Coefficient | --- | -5.52 | --- | mV/℃ |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25℃ | --- | --- | 10 | uA |
| VDS=80V , VGS=0V , TJ=55℃ | --- | --- | 100 |
| IGSS | Gate-Source Leakage Current | VGS=±20V , V DS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=20A | --- | 28.7 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.6 | 3.2 | Ω |
| Qg | Total Gate Charge (10V) | | --- | 60 | 84 | |
| Qgs | Gate-Source Charge | --- | 9.7 | 14 |
| Qgd | Gate-Drain Charge | --- | 11.8 | 16.5 |
| Td(on) | Turn-On Delay Time | | --- | 10.4 | 21 | |
| Tr | Rise Time | --- | 46 | 83 |
| Td(off) | Turn-Off Delay Time | --- | 54 | 108 |
| Tf | Fall Time | --- | 10 | 20 |
| Ciss | Input Capacitance | | --- | 3848 | 5387 | |
| Coss | Output Capacitance | --- | 137 | 192 |
| Crss | Reverse Transfer Capacitance | --- | 82 | 115 |
| IS | Continuous Source Current 1,5 | VG=VD=0V , Force Current | --- | --- | 22 | A |
| ISM | Pulsed Source Current 2,5 | --- | --- | 45 | A |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25℃ | --- | --- | 1.2 | V |
| trr | Reverse Recovery Time | IF=20A , dI/dt=100A/µs , | --- | 30 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 37 | --- | nC |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | --- | --- | V |
| △BVDSS / T J | BVDSS Temperature Coefficient | Reference to 25℃ , ID=1mA | --- | 0.098 | --- | V/℃ |
RDS(ON) |
Static Drain-Source On-Resistance | VGS=10V , I D=20A | --- | 38 | 47 |
mΩ |
| VGS=4.5V , I D=15A | --- | 40 | 50 |
| VGS(th) | Gate Threshold Voltage | | 1.3 | --- | 2.5 | V |
| △VGS(th) | VGS(th) Temperature Coefficient | --- | -5.52 | --- | mV/℃ |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25℃ | --- | --- | 10 | uA |
| VDS=80V , VGS=0V , TJ=55℃ | --- | --- | 100 |
| IGSS | Gate-Source Leakage Current | VGS=±20V , V DS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=20A | --- | 28.7 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.6 | 3.2 | Ω |
| Qg | Total Gate Charge (10V) | | --- | 60 | 84 | |
| Qgs | Gate-Source Charge | --- | 9.7 | 14 |
| Qgd | Gate-Drain Charge | --- | 11.8 | 16.5 |
| Td(on) | Turn-On Delay Time | | --- | 10.4 | 21 | |
| Tr | Rise Time | --- | 46 | 83 |
| Td(off) | Turn-Off Delay Time | --- | 54 | 108 |
| Tf | Fall Time | --- | 10 | 20 |
| Ciss | Input Capacitance | | --- | 3848 | 5387 | |
| Coss | Output Capacitance | --- | 137 | 192 |
| Crss | Reverse Transfer Capacitance | --- | 82 | 115 |
| IS | Continuous Source Current 1,5 | VG=VD=0V , Force Current | --- | --- | 22 | A |
| ISM | Pulsed Source Current 2,5 | --- | --- | 45 | A |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25℃ | --- | --- | 1.2 | V |
| trr | Reverse Recovery Time | IF=20A , dI/dt=100A/µs , | --- | 30 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 37 | --- | nC |
Note :
1.The data tested by surface mounted on a 1 inch FR-4 board with
2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is
VDD=25V,VGS=10V,L=0.1mH,IAS =27A
4.The power dissipation is limited by 150℃ junction temperature
5.The data is theoretically the same as IDand IDM, in real
applications , should be limited by total power dissipation.
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