AP50N10D Dual Mosfet Switch / 50A 100V TO-252 High Power Transistor
Dual Mosfet Switch applications
Switch Mode Power Supplies (SMPS)
Residential, commercial, architectural and street lighting
DC-DC converters
Motor control
Automotive applications
Dual Mosfet Switch Description:
The AP50N10D uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V.
This device is suitable for use as a
Battery protection or in other Switching application.
Dual Mosfet Switch Features
VDS = 100V ID =50A
RDS(ON) < 25mΩ@ VGS=10V
Package Marking and Ordering Information
| Product ID | Pack | Marking | Qty(PCS) |
| AP50N10D | TO-252 | AP50N10D XXX YYYY | 2500 |
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
| Symbol | Parameter | Limit | Unit |
| VDS | Drain-Source Voltage | 100 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID | Drain Current-Continuous | 50 | A |
| I (100℃) | Drain Current-Continuous(TC=100℃) | 21 | A |
| IDM | Pulsed Drain Current | 70 | A |
| PD | Maximum Power Dissipation | 85 | W |
| Derating factor | 0.57 | W/℃ |
| EAS | Single pulse avalanche energy (Note 5) | 256 | mJ |
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 To 175 | ℃ |
| RθJC | Thermal Resistance, Junction-to-Case (Note 2) | 1.8 | ℃/W |
Electrical Characteristics (TC=25℃unless otherwise noted)
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V ID=250μA | 100 | | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=100V,VGS=0V | - | - | 1 | μA |
| IGSS | Gate-Body Leakage Current | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS,ID=250 μA | 1 | | 3 | V |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=20A | - | 24 | 28 | mΩ |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V, ID=10A | - | 28 | 30 | mΩ |
| gFS | Forward Transconductance | VDS=5V,ID=10A | - | 15 | - | S |
| Clss | Input Capacitance | VDS=25V,VGS=0V,
F=1.0MHz | - | 2000 | - | PF |
| Coss | Output Capacitance | - | 300 | - | PF |
| Crss | Reverse Transfer Capacitance | - | 250 | - | PF |
| td(on) | Turn-on Delay Time | VDD=50V,RL=5Ω
VGS=10V,RGEN=3Ω | - | 7 | - | nS |
r t | Turn-on Rise Time | - | 7 | - | nS |
| td(off) | Turn-Off Delay Time | - | 29 | - | nS |
f t | Turn-Off Fall Time | - | 7 | - | nS |
| Qg | Total Gate Charge | VDS=50V,ID=10A,
VGS=10V | - | 39 | - | nC |
| Qgs | Gate-Source Charge | - | 8 | - | nC |
| Qgd | Gate-Drain Charge | - | 12 | - | nC |
| VSD | Diode Forward Voltage (Note 3) | VGS=0V,IS=20A | - | - | 1.2 | V |
S I | Diode Forward Current (Note 2) | - | - | - | 30 | A |
rr t | Reverse Recovery Time | TJ = 25°C, IF = 10A di/dt = 100A/μs(Note3) | - | 32 | - | nS |
| Qrr | Reverse Recovery Charge | - | 53 | - | nC |
| ton | Forward Turn-On Time | Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) |
Notes:
1,Repetitive Rating: Pulse width limited by maximum junction
temperature.
2,Surface Mounted on FR4 Board, t ≤ 10 sec.
3,Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
4,Guaranteed by design, not subject to production
5,EAS Condition : Tj=25 ℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω, IAS=32A
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