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High Frequency Mosfet Power Transistor 12N10 N Channel Low Gate Charge

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High Frequency Mosfet Power Transistor 12N10 N Channel Low Gate Charge

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Brand Name :	Hua Xuan Yang
Model Number :	12N10
Certification :	RoHS、SGS
Price :	Negotiated
Payment Terms :	L/C T/T Western Union
Supply Ability :	18,000,000PCS / Per Day
Delivery Time :	1 - 2 Weeks

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High Frequency Mosfet Power Transistor 12N10 N Channel Low Gate Charge

HXY12N10 N-Channel Enhancement Mode Power MOSFET

DESCRIPTION

The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

FEATURES

● V_DS =100V,I_D =12A

RDS(ON) < 130mΩ @ VGS =10V

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

High Frequency Mosfet Power Transistor 12N10 N Channel Low Gate Charge

ORDERING INFORMATION

Parameter	Symbol	Limit	Unit
Drain-Source Voltage	VDS	100	V
Gate-Source Voltage	VGS	±20	V
Drain Current-Continuous	ID	12	A
Drain Current-Continuous(T_C=100℃)	I_D (100℃)	6.5	A
Pulsed Drain Current	IDM	38.4	A
Maximum Power Dissipation	PD	30	W
Derating factor		0.2	W/℃
Single pulse avalanche energy ^(Note ⁵⁾	EAS	20	mJ
Operating Junction and Storage Temperature Range	TJ,TSTG	-55 To 175	℃

Note: Pin Assignment: G: Gate D: Drain S: Source

High Frequency Mosfet Power Transistor 12N10 N Channel Low Gate Charge

ABSOLUTE MAXIMUM RATINGS (T_C = 25°С, unless otherwise specified)

PARAMETER		SYMBOL	RATINGS	UNIT
Drain-Source Voltage		VDSS	600	V
Gate-Source Voltage		VGSS	±30	V
Continuous Drain Current		I_D	10	A
Pulsed Drain Current (Note 2)		IDM	40	A
Avalanche Current (Note 2)		IAR	8.0	A
Avalanche Energy	Single Pulsed (Note 3)	EAS	365	mJ
Peak Diode Recovery dv/dt (Note 4)		dv/dt	4.5	ns
Power Dissipation	TO-220	P_D	156	W
	TO-220F1		50	W
	TO-220F2		52	W
Junction Temperature		T_J	+150	°C
Storage Temperature		TSTG	-55 ~ +150	°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

4. Repetitive Rating: Pulse width limited by maximum junction temperature.

5. L = 84mH, I_AS =1.4A, V_DD = 50V, R_G = 25 Ω Starting T_J = 25°C

6. I_SD ≤ 2.0A, di/dt ≤200A/μs, V_DD ≤BV_DSS, Starting T_J = 25°C

ELECTRICAL CHARACTERISTICS (T_J = 25°С, unless otherwise specified)

Parameter	Symbol	Condition	Min	Typ	Max	Unit
Off Characteristics
Drain-Source Breakdown Voltage	BVDSS	V_GS=0V I_D=250μA	100	110	-	V
Zero Gate Voltage Drain Current	IDSS	V_DS=100V,V_GS=0V	-	-	1	μA
Gate-Body Leakage Current	IGSS	V_GS=±20V,V_DS=0V	-	-	±100	nA
On Characteristics ^(Note ³⁾
Gate Threshold Voltage	VGS(th)	V_DS=V_GS,I_D=250μA	1.2	1.8	2.5	V
Drain-Source On-State Resistance	RDS(ON)	V_GS=10V, I_D =8A	98		130	m Ω
Forward Transconductance	gFS	V_DS=25V,I_D=6A	3.5	-	-	S
Dynamic Characteristics ^(Note4)
Input Capacitance	Clss	V_DS=25V,V_GS=0V, F=1.0MHz	-	690	-	PF
Output Capacitance	Coss		-	120	-	PF
Reverse Transfer Capacitance	Crss		-	90	-	PF
Switching Characteristics ^(Note ⁴⁾
Turn-on Delay Time	td(on)	V_DD=30V,I_D=2A,R_L=15Ω V_GS=10V,R_G=2.5Ω	-	11	-	nS
Turn-on Rise Time	t_r		-	7.4	-	nS
Turn-Off Delay Time	td(off)		-	35	-	nS
Turn-Off Fall Time	t_f		-	9.1	-	nS
Total Gate Charge	Q_g	V_DS=30V,I_D=3A, V_GS=10V	-	15.5		nC
Gate-Source Charge	Qgs		-	3.2	-	nC
Gate-Drain Charge	Qgd		-	4.7	-	nC
Drain-Source Diode Characteristics
Diode Forward Voltage ^(Note ³⁾	VSD	V_GS=0V,I_S=9.6A	-	-	1.2	V
Diode Forward Current ^(Note ²⁾	I_S		-	-	9.6	A
Reverse Recovery Time	trr	TJ = 25°C, IF =9.6A di/dt = 100A/μs^(Note3)	-	21		nS
Reverse Recovery Charge	Qrr		-	97		nC
Forward Turn-On Time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Essentially independent of operating temperature.Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.

High Frequency Mosfet Power Transistor 12N10 N Channel Low Gate Charge

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