The 5G03S/DF uses advanced trench

technology to provide excellent R_DS(ON) and low gate charge .

The complementary MOSFETs may be used to form a

level shifted high side switch, and for a host of other

applications

General Features

N-Channel

V_DS = 30V,I_D =8A

R_DS(ON) < 20m Ω@ V_GS=10V

P-Channel

V_DS = -30V,I_D = -6.2A

R_DS(ON) < -50mΩ@ V_GS=-10V

Application

Power switching application

Hard Switched and High Frequency Circuits

Uninterruptible Power Supply

Package Marking and Ordering Information

Note :

1,Repetitive Rating : Pulsed width limited by maximum junction temperature.

2,V_DD=25V,V_GS=10V,L=0.1mH,I_AS=17A.,RG=25 ,Starting TJ=25℃.

3,The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. _{4,Essentially independent of operating temperature}.