WST3078 N&P-Ch MOSFET

Description

The WST3078 is the highest performance trench

N-ch and P-ch MOSFETs with extreme high cell

density , which provide excellent RDSON and gate

charge for most of the small power switching and

load switch applications.

The WST3078 meet the RoHS and Green Product

requirement with full function reliability approved.

• Advanced high cell density Trench technology
• z Super Low Gate Charge
• z Excellent Cdv/dt effect decline
• z Green Device Available

Applications

• High Frequency Point-of-Load Synchronous s
• Small power switching for MB/NB/UMPC/VGA
• Networking DC-DC Power System
• Load Switch

N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Drain-Source Body Diode Characteristics

Note :

1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3. The power dissipation is limited by 150℃ junction temperature

4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Drain-Source Body Diode Characteristics

Note :

1. The data tested by surface mounted on a 1 inch2

FR-4 board with 2OZ copper.

2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3. The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

N-Channel Typical Characteristics

P-Channel Typical Characteristics