Home > Mosfet Power Transistor >

WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet

Product Categories

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Now

WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet

Ask Lasest Price
Brand Name :	Hua Xuan Yang
Certification :	RoHS、SGS
Price :	Negotiated
Delivery Time :	1 - 2 Weeks
Payment Terms :	L/C T/T Western Union
Supply Ability :	18,000,000PCS / Per Day
Model Number :	WSF3012

Add to Cart

Product Details
Company Profile

WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet

WSF3012 N-Ch and P-Channel MOSFET

Description

The WSF3012 is the highest performance trench N-ch

and P-ch MOSFET with extreme high cell density ,

which provide excellent RDSON and gate charge for

most of the synchronous buck converter applications .

The WSF3012 meet the RoHS and Green Product

requirement 100% EAS guaranteed with full function

reliability approved.

Product Summery

Features

z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available

Applications

z High Frequency Point-of-Load Synchronous

Buck Converter for MB/NB/UMPC/VGA

z Networking DC-DC Power System

z CCFL Back-light Inverter

Absolute Maximum Ratings

Thermal Data

N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Guaranteed Avalanche Characteristics

Diode Characteristics

Note :

1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3. The power dissipation is limited by 150℃ junction temperature

4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Guaranteed Avalanche Characteristics

Diode Characteristics

Note :

1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3. The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-27.2A

4. The power dissipation is limited by 150℃ junction temperature

5. The Min. value is 100% EAS tested guarantee.

6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

N-Channel Typical Characteristics

P-Channel Typical Characteristics

Product Tags:

high current mosfet switch

high voltage transistor

WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Shenzhen Hua Xuan Yang Electronics Co.,Ltd
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!

Explore more Mosfet Power Transistor products from this supplier

Find Similar Products By Category:

Electronic Components & Supplies

Hot Searches: