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HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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    Buy cheap HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A from wholesalers
     
    Buy cheap HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A from wholesalers
    • Buy cheap HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A from wholesalers

    HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A

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    Brand Name : Hua Xuan Yang
    Certification : RoHS、SGS
    Price : Negotiated
    Delivery Time : 1 - 2 Weeks
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Model Number : HXY4812
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    HXY4812 30V Mosfet Power Transistor Dual N-Channel Continuous Drain Current 6.5A

    HXY4812 30V Dual N-Channel MOSFET


    General Description


    The HXY4822A uses advanced trench technology to

    provide excellent RDS(ON) and low gate charge. This

    device is suitable for use as a load switch or in PWM

    applications.


    Product Summary


    Absolute Maximum Ratings T =25°C unless otherwise noted



    Electrical Characteristics (T =25°C unless otherwise noted)



    A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

    value in any given application depends on the user's specific board design.

    B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

    C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

    D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

    E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.



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