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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge

    Buy cheap 8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge from wholesalers
     
    Buy cheap 8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge from wholesalers
    • Buy cheap 8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge from wholesalers

    8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge

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    Brand Name : Hua Xuan Yang
    Certification : RoHS、SGS
    Price : Negotiated
    Delivery Time : 1 - 2 Weeks
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Model Number : 8H02ETS
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    8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge

    20V N+N-Channel Enhancement Mode MOSFET


    DESCRIPTION

    The 8H02ETSuses advanced trench technology to

    provide excellent RDS(ON), low gate charge and

    operation with gate voltages as low as 2.5V.


    GENERAL FEATURES

    VDS = 20V,ID = 7A

    8H02TS RDS(ON) < 28mΩ @ VGS=2.5V

    RDS(ON) < 26mΩ @ VGS=3.1V

    RDS(ON) < 22mΩ @ VGS=4V

    RDS(ON) < 20mΩ @ VGS=4.5V

    ESD Rating:2000V HBM


    Application

    Battery protection

    Load switch Power management



    Package Marking and Ordering Information


    Product IDPackMarkingQty(PCS)
    8H02ETSTSSOP-88H02ETS WW YYYY5000/3000

    ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)


    ParameterSymbolLimitUnit
    Drain-Source VoltageVDS20V
    Gate-Source VoltageVGS±12V
    Drain Current-Continuous@ Current-Pulsed (Note 1)ID7V
    Maximum Power DissipationPD1.5W
    Operating Junction and Storage Temperature RangeTJ,TSTG-55 To 150
    Thermal Resistance,Junction-to-Ambient (Note 2)RθJA83℃/W

    ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)



    NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
    TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
    Quality 8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge for sale
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