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3DD13003 NPN Transistor Circuit , NPN Power Transistor Collector Emitter Voltage 400V

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Name: 3DD13003 NPN Transistor Circuit NPN Power Transistor Collector Emitter Voltage 400V
Brand: Hua Xuan Yang
Price: 1 USD

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TO-220-3L Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR (NPN)

FEATURE

· power switching applications

MAXIMUM RATINGS (T_a =25 Š unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	700	V
VCEO	Collector-Emitter Voltage	400	V
VEBO	Emitter-Base Voltage	9	V
I_C	Collector Current -Continuous	1.5	A
P_C	Collector Power Dissipation	2	W
T_J	Junction Temperature	150	℃
Tstg	Storage Temperature	-55~150	℃

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Ta=25 Š unless otherwise specified

Parameter	Symbol S ymbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C =5mA, I_E=0	700			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C=10mA, I_B=0	400			V
Emitter-base breakdown voltage	V(BR)EBO	I_E=2mA, I_C=0	9			V
Collector cut-off current	ICBO	V_CB=700V,I_E=0			1	mA
Collector cut-off current	ICEO	V_CE=400V,I_B=0			0.5	mA
Emitter cut-off current	IEBO	V_EB=9V, I_C=0			1	mA
DC current gain	hFE1	V_CE=5V, I_C= 0.5 A	8		40
	hFE2	V_CE=5V, I_C= 1.5A	5
Collector-emitter saturation voltage	VCE(sat)	I_C=1A,I_B=0.25A			0.6	V
Base-emitter saturation voltage	VBE(sat)	I_C=1A,I_B=0.25A			1.2	V
Transition frequency	f_T	V_CE=10V,Ic=100mA, f =1MHz	5			MHz
Fall time	t_f	I_C=1A, I_B1=-I_B2=0.2A, V_CC=100V			0.5	µs
Storage time	tS	I_C=250mA (UI9600)	2		4	μs

CLASSIFICATION OF hFE1

Range

8-10

10-15

15-20

20-25

25-30

30-35

35-40

CLASSIFICATION OF tS

Rank	A1	A2	B1	B2
Range	2-2.5 (μs )	2.5-3(μs )	3-3.5(μs )	3.5-4 (μs

TO-92 Package Outline Dimensions

Product Tags:

tip pnp transistor

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