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3DD13005HD55 Tip Power Transistors VCBO 600V Semiconductor Triode Type

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Name: 3DD13005HD55 Tip Power Transistors VCBO 600V Semiconductor Triode Type
Brand: Hua Xuan Yang
Price: 1 USD

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TO-126 Plastic-Encapsulate Transistors 3DD13005HD55 TRANSISTOR (NPN)

FEATURE

Ÿ Power Switching Applications

Ÿ Good high temperature

Ÿ Low saturation voltage

Ÿ High speed switching

MARKING

JCET Logo 13005HD55=Device code

ORDERING INFORMATION

MAXIMUM RATINGS (T_a =25 Š unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	800	V
VCEO	Collector-Emitter Voltage	450	V
VEBO	Emitter-Base Voltage	9	V
I_C	Collector Current	3.5	A
P_C	Collector Power Dissipation	1.5	W
RθJA	Thermal Resistance From Junction To Ambient	83.3	℃/W
T_j	Junction Temperature	150	℃
Tstg	Storage Temperature	-55~+150	℃

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Ta=25 Š unless otherwise specified

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=1mA,I_E=0	800			V
Collector-emitter breakdown voltage	V(BR)CEO*	I_C=10mA,I_B=0	450			V
Emitter-base breakdown voltage	V(BR)EBO	I_E= 1mA,I_C=0	9			V
Collector cut-off current	ICBO	V_CB=700V,I_E=0			100	μA
Collector cut-off current	ICEO	V_CE=450V,I_B=0			100	μA
Emitter cut-off current	IEBO	V_EB=9V,I_C=0			100	μA
DC current gain	hFE(1) *	V_CE=5V, I_C=1A	10		40
	hFE(2) *	V_CE=5V, I_C=5mA	10
	hFE(3) *	V_CE=5V, I_C=2A	5
Collector-emitter saturation voltage	VCE(sat)1	I_C=1A,I_B=200mA			0.3	V
Collector-emitter saturation voltage	VCE(sat)2	I_C=2A,I_B=500mA			0.6	V
Base-emitter saturation voltage	VBE(sat)1	I_C=2A,I_B=500mA			1.2	V
Base-emitter saturation voltage	VBE(sat)2	I_C=500mA,I_B=100mA			1	V
Emitter-collector forward voltage	VF_EC	I_C=2A			2	V
Transition frequency	f_T	V_CE=10V,I_C=500mA	5			MHZ
Storage time	ts	I_C=250mA (UI9600)			5	µs

Typical Characteristics

TO-92 Package Outline Dimensions

Product Tags:

tip series transistors

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