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2N3906 NPN Transistor Circuit , NPN Power Transistor For Mobile Power Supply

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Name: 2N3906 NPN Transistor Circuit NPN Power Transistor For Mobile Power Supply
Brand: Hua Xuan Yang
Price: 1 USD

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SOT-89-3L Plastic-Encapsulate Transistors 2N3906 TRANSISTOR (NPN).

FEATURE

Ÿ PNP silicon epitaxial planar transistor for switching and Amplifier applications

Ÿ As complementary type, the NPN transistor 2N3904 is Recommended

Ÿ This transistor is also available in the SOT-23 case with the type designation MMBT3906

MAXIMUM RATINGS(T_a=25ć unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	-40	V
VCEO	Collector-Emitter Voltage	-40	V
VEBO	Emitter-Base Voltage	-5	V
I_C	Collector Current-Continuous	-0.2	A
P_C	Collector Power Dissipation	0.625	W
T_J	Junction Temperature	150	ć
Tstg	Storage Temperature	-55~150	ć

Ta=25 Š unless otherwise specified

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C = -10µA, I_E=0	-40			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C =-1mA , I_B=0	-40			V
Emitter-base breakdown voltage	V(BR)EBO	I_E= -10µA, I_C=0	-5			V
Collector cut-off current	ICBO	V_CB= -40 V,I_E=0			-0.1	µA
Collector cut-off current	ICEX	V_CE= -30 V,V_EB(off)=-3V			-50	nA
Emitter cut-off current	IEBO	V_EB= -5 V , I_C=0			-0.1	µA
DC current gain	hFE1	V_CE=-1 V, I_C= -10mA	100		400
	hFE2	V_CE=-1 V, I_C= -50mA	60
	hFE3	V_CE=-2 V, I_C= -100mA	30
Collector-emitter saturation voltage	VCE(sat)	I_C= -50mA, I_B= -5mA			-0.4	V
Base-emitter saturation voltage	VBE(sat)	I_C= -50mA, I_B= -5mA			-0.95	V
Transition frequency	f_T	V_CE=-20V, I_C= -10mA f = 100MHz	250			MHz
Delay Time	td	V_CC=-3V,V_BE=-0.5V, I_C=-10mA,I_B1=-1mA			35	ns
Rise Time	tr				35	ns
Storage Time	ts	V_CC=-3V,Ic=-10mA I_B1=I_B2=-1mA			225	ns
Fall Time	tf				75	ns

Typical Characteristics

Package Outline Dimensions

SOT-89-3L Suggested Pad Layout

TO-92 Suggested Pad Layout

TO-92 7DSH DQG 5HHO

Product Tags:

tip pnp transistor

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