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2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

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2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

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Brand Name :	Hua Xuan Yang
Certification :	RoHS、SGS
Price :	Negotiated
Delivery Time :	1 - 2 Weeks
Payment Terms :	L/C T/T Western Union
Supply Ability :	18,000,000PCS / Per Day
Model Number :	2N3904

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2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

SOT-89-3L Plastic-Encapsulate Transistors 2N3904 TRANSISTOR (NPN).

FEATURE

Ÿ NPN silicon epitaxial planar transistor for switching and Amplifier applications

Ÿ As complementary type, the PNP transistor 2N3906 is Recommended

Ÿ This transistor is also available in the SOT-23 case with the type designation MMBT3904

ORDERING INFORMATION

Part Number	Package	Packing Method	Pack Quantity
2N3904	TO-92	Bulk	1000pcs/Bag
2N3904-TA	TO-92	Tape	2000pcs/Box

MAXIMUM RATINGS (Ta=25Š unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	60	V
VCEO	Collector-Emitter Voltage	40	V
VEBO	Emitter-Base Voltage	6	V
I_C	Collector Current -Continuous	0.2	A
P_C	Collector Power Dissipation	0.625	W
T_J	Junction Temperature	150	Š
Tstg	Storage Temperature	-55-150	Š

Ta=25 Š unless otherwise specified

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=10µA, I_E=0	60			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C= 1mA , I_B=0	40			V
Emitter-base breakdown voltage	V(BR)EBO	I_E= 10µA, I_C=0	6			V
Collector cut-off current	ICBO	V_CB=60V, I_E=0			0.1	µA
Collector cut-off current	ICEX	V_CE=30V, V_EB(off)=3V			0.05	µA
Emitter cut-off current	IEBO	V_EB= 5V, I_C=0			0.1	µA
DC current gain	hFE1	V_CE=1V, I_C=10mA	100		400
	hFE2	V_CE=1V, I_C=50mA	60
	hFE3	V_CE=1V, I_C=100mA	30
Collector-emitter saturation voltage	VCE(sat)	I_C=50mA, I_B=5mA			0.3	V
Base-emitter saturation voltage	VBE(sat)	I_C=50mA, I_B=5mA			0.95	V
Transition frequency	f_T	V_CE=20V,I_C=10mA,f=100MHz	300			MH_Z
Delay Time	t_d	V_CC=3V,V_BE=0.5V, I_C=10mA,I_B1=1mA			35	ns
Rise Time	t_r	V_CC=3V,V_BE=0.5V, I_C=10mA,I_B1=1mA			35	ns
Storage Time	t_s	V_CC=3V, I_C=10mA I_B1=I_B2=1mA			200	ns
Fall Time	t_f	V_CC=3V, I_C=10mA I_B1=I_B2=1mA			50	ns

CLASSIFICATION OF h_FE1

Rank	O	Y	G
Ra nge	100-200	200-300	300-400

Typical Characteristics

Package Outline Dimensions

Symbol	Dimensions In Millimeters		Dimensions In Inches
	Min	Max	Min	Max
A	3.300	3.700	0.130	0.146
A1	1.100	1.400	0.043	0.055
b	0.380	0.550	0.015	0.022
c	0.360	0.510	0.014	0.020
D	4.300	4.700	0.169	0.185
D1	3.430		0.135
E	4.300	4.700	0.169	0.185
e	1.270 TYP		0.050 TYP
e1	2.440	2.640	0.096	0.104
L	14.100	14.500	0.555	0.571
0		1.600		0.063
h	0.000	0.380	0.000	0.015

SOT-89-3L Suggested Pad Layout

TO-92 Suggested Pad Layout

TO-92 7DSH DQG 5HHO

Product Tags:

tip pnp transistor

high power pnp transistor

2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

ORDERING INFORMATION

MAXIMUM RATINGS (Ta=25Š unless otherwise noted)

CLASSIFICATION OF hFE1

tip pnp transistor

high power pnp transistor

2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

CLASSIFICATION OF h_FE1