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TO-92 C945 Tip Power Transistors VEBO 5V Low Noise NPN

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Name: TO92 C945 Tip Power Transistors VEBO 5V Low Noise NPN
Brand: Hua Xuan Yang
Price: 1 USD

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TO-92 Plastic-Encapsulate Transistors C945 TRANSISTOR (NPN)

FEATURE

Ÿ Excellent hFE linearity

Ÿ Low noise

Ÿ Complementary to A733

MARKING

C945=Device code

Solid dot=Green molding compound device, if none,the normal device

Z=Rank of hFE

XXX=Code

ORDERING INFORMATION

MAXIMUM RATINGS (T_a =25 Š unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	60	V
V CEO	Collector-Emitter Voltage	50	V
V EBO	Emitter-Base Voltage	5	V
I _C	Collector Current -Continuous	150	mA
P_C	Collector Power Dissipation	400	mW
T_J	Junction Temperature	150	℃
Tstg	St orage Temperature	-55~+150	℃

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=1mA , I_E=0	60			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C=100μA , I_B=0	50			V
Emitter-base breakdown voltage	V(BR)EBO	I_E=100 μA, I_C=0	5			V
Collector cut-off current	ICBO	V_CB=60V, I_E=0			0.1	μA
Collector cut-off current	ICEO	VCE=45V, IB=0			0.1	μA
Emitter cut-off current	IEBO	V_EB=5V ,I_C=0			0.1	μA
DC current gain	hFE(1)	V_CE=6V , I_C=1mA	70		700
	hFE(2)	V_CE=6V , I_C=0.1mA	40
Collector-emitter saturation voltage	VCE(sat)	I_C=100mA, I_B=10mA			0.3	V
Base-emitter saturation voltage	VBE(sat)	I_C=100mA, I_B=10mA			1	V
Transition frequency	f_T	V_CE=6V,I_C=10mA,f=30MHz	200			MHz
Collector output capacitance	Cob	V_CB=10V,I_E=0,f=1MHz			3.0	pF
Noise figure	NF	VCE=6V,IC=0.1mA RG=10kΩ,f=1MHz			10	dB

CLASSIFICATION OF h_FE(2)

Rank	O	Y	GR	BL
Range	70-140	120-240	200-400	350-700

Typical Characteristics

Package Outline Dimensions

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