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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

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HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v

    Buy cheap HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v from wholesalers
     
    Buy cheap HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v from wholesalers
    • Buy cheap HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v from wholesalers

    HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v

    Ask Lasest Price
    Brand Name : Hua Xuan Yang
    Certification : RoHS、SGS
    Price : Negotiated
    Delivery Time : 1 - 2 Weeks
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Model Number : HXY4616
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    HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v

    HXY4616 30V Complementary MOSFET


    Description


    The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscomplementary N and P channel MOSFET configurationis ideal for low Input Voltage inverter applications.



    N-Channel Electrical Characteristics (T=25°C unless otherwise noted)

    A. The value of RθJA is measured with the device mounted on 1in A =25°C. The value in any given application depends on the user's specific board design.2 FR-4 board with 2oz. Copper, in a still air environment with T

    B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C.

    D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

    E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

    F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.


    N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
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