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3DD13003B Tip Power Transistors Emitter Base Voltage 9v Low Rdson

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Name: 3DD13003B Tip Power Transistors Emitter Base Voltage 9v Low Rdson
Brand: Hua Xuan Yang
Price: 1 USD

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TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN)

FEATURE

Ÿ power switching applications

MARKING

13003B=Device code

Solid dot=Green molding compound device, if none,the normal device

XXX=Code

ORDERING INFORMATION

MAXIMUM RATINGS (T_a =25 Š unless otherwise noted)

Symbol	Parameter	Value	Unit
V CBO	Collector-Base Voltage	700	V
V CEO	Collector-Emitter Voltage	400	V
V EBO	Emitter-Base Voltage	9	V
I_C	Collector Current -Continuous	1.5	A
P_C	Collector Power Dissipation	0.9	W
T_J	Junction Temperature	150	℃
Tstg	Storage Temperature	-55 ~150	℃

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C= 1mA, I_E=0	700			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C= 10mA, I_B=0	400			V
Emitter-base breakdown voltage	V(BR)EBO	I_E= 1mA, I_C=0	9			V
Collector cut-off current	ICBO	V_CB= 700V, I_E=0			100	µA
Collector cut-off current	ICEO	V_CE= 400V, I_B=0			50	µA
Emitter cut-off current	IEBO	V_EB= 7V, I_C=0			10	µA
DC current gain	hFE	V_CE= 10V, I_C= 0.4 A	20		40
Collector-emitter saturation voltage	VCE(sat)1	I_C=1.5A,I_B= 0.5A			3	V
	VCE(sat)2	I_C=0.5A, I_B= 0.1A			0.8	V
Base-emitter saturation voltage	VBE(sat)	I_C=0.5A, I_B=0.1A			1	V
Transition Frequency	f_T	V_CE=10V,I_C=100mA, f =1MHz	4			MHz
Fall time	t_f	I_C=1A			0.7	µs
Storage time	t_s	I_B1=-I_B2=0.2A			4	µs

CLASSIFICATION OF h_FE(2)

Rank
Range	20-25	25-30	30-35	35-40

Typical Characteristics

TO-92 Package Outline Dimensions

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