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3DD13001B NPN Tip Power Transistors TO-92 Plastic Encapsulated VCEO 420V

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Name: 3DD13001B NPN Tip Power Transistors TO92 Plastic Encapsulated VCEO 420V
Brand: Hua Xuan Yang
Price: 1 USD

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TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN)

FEATURE

Ÿ power switching applications

MARKING

13001=Device code

S 6B=Code

ORDERING INFORMATION

MAXIMUM RATINGS (T_a =25 Š unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector -Base Voltage	600	V
VCEO	Collector-Emitter Voltage	420	V
VEBO	Emitter-Base Voltage	7	V
I_C	Collector Current -Continuous	0.2	A
P_C	Collector Power Dissipation	0.75	W
T_J	Junction Temperature	150	℃
Tstg	Storage Temperature	-55 ~150	℃

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C= 100μA , I_E=0	600			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C= 1mA , I_B=0	400			V
Emitter-base breakdown voltage	V(BR)EBO	I_E= 100μA, I_C=0	7			V
Collector cut-off current	ICBO	V_CB= 600V , I_E=0			100	μA
Collector cut-off current	ICEO	V_CE= 400V, I_B=0			200	μA
Emitter cut-off current	IEBO	V_EB=7V, I_C=0			100	μA
DC current gain	hFE(1)	V_CE= 20V, I_C= 20mA	14		29
	hFE(2)	V_CE= 10V, I_C= 0.25 mA	5
Collector-emitter saturation voltage	VCE(sat)	I_C= 50mA, I_B= 10 mA			0.5	V
Base-emitter saturation voltage	VBE(sat)	I_C= 50 mA, I_B= 10mA			1.2	V
Transition frequency	f_T	V_CE= 20V, I_C=20mA f = 1MHz	8			MHz
Fall time	t_f	I_C=50mA, I_B1=-I_B2=5mA, V_CC=45V			0.3	μs
Storage time	t_S				1.5	μs

CLASSIFICATION OF h_FE(2)

Range

14-17

17-20

20-23

23-26

26-29

TO-92 Package Outline Dimensions

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