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TIP41/41A/41B/41C NPN High Speed Switching Transistor High Performance

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Name: TIP4141A41B41C NPN High Speed Switching Transistor High Performance
Brand: Hua Xuan Yang
Price: 1 USD

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TO-220-3L Plastic-Encapsulate Transistors

TIP41/41A/41B/41C TRANSISTOR (NPN)

FEATURE

Medium Power Linear Switching Applications

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol	Parameter	TIP41	TIP41A	TIP41B	TIP41C	Unit
VCBO	Collector-Base Voltage	40	60	80	100	V
VCEO	Collector-Emitter Voltage	40	60	80	100	V
VEBO	Emitter-Base Voltage	5				V
I_C	Collector Current -Continuous	6				A
P_C	Collector Power Dissipation	2				W
T_J	Junction Temperature	150				℃
Tstg	Storage Temperature Range	-55~+150				℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter	Symbol	Test conditions	Min	Max	Unit
Collector-base breakdown voltage TIP41 TIP4 1A TIP41B TIP41C	V(BR)CBO	I_C= 1mA, I_E=0	40 60 80 100		V
Collector-emitter breakdown voltage TIP41 TIP41A TIP41B TIP41C	VCEO(sus)	I_C= 30mA, I_B=0	40 60 80 100		V
Emitter-base breakdown voltage	V(BR)EBO	I_E= 1mA, I_C=0	5		V
Collector cut-off current TIP41 TIP4 1A TIP41B TIP41C	ICBO	V_CB=40V, I_E=0 V_CB=60V, I_E=0 V_CB=80V, I_E=0 V_CB=100V, I_E=0	0.4		mA
Collector cut-off current TIP41/41A TIP41B/41C	ICEO	V_CE= 30V, I_B= 0 V_CE= 60V, I_B= 0	0.7		mA
Emitter cut-off current	IEBO	V_EB=5V, I_C=0		1	mA
DC current gain	hFE(1)	V_CE= 4V, I_C= 0.3A	30
	hFE(2)	V_CE=4 V, I_C= 3A	15	75
Collector-emitter saturation voltage	VCE(sat)	I_C=6A, I_B=0.6A		1.5	V
Base-emitter voltage	VBE(on)	V_CE= 4V, I_C=6A		2	V
Transition frequency	f_T	V_CE=10V , I_C=0.5A f =1MHz	3		MH_Z

Typical Characterisitics

TIP41/41A/41B/41C

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