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High Power Semiconductor Triode TIP42/42A/42B/42C Emitter Base Voltage -5 V

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Name: High Power Semiconductor Triode TIP4242A42B42C Emitter Base Voltage 5 V
Brand: Hua Xuan Yang
Price: 1 USD

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TO-220-3L Plastic-Encapsulate Transistors TIP42/42A/42B/42C TRANSISTOR (PNP)

FEATURE

Medium Power Linear Switching Applications

Complement to TIP41/41A/41B/41C

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol	Parameter	TIP42	TIP42A	TIP42B	TIP42C	Unit
VCBO	Collector-Base Voltage	-40	-60	-80	-100	V
VCEO	Collector-Emitter Voltage	-40	-60	-80	-100	V
VEBO	Emitter-Base Voltage	-5				V
I_C	Collector Current -Continuous	-6				A
P_C	Collector Power Dissipation	2				W
T_J	Junction Temperature	150				℃
Tstg	Storage Temperature Range	-55to+150				℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter	Symbol	Test conditions	Min	Max	Unit
Collector-base breakdown voltage TIP42 TIP42A TIP42B TIP42C	V(BR)CBO	I_C= -1mA, I_E=0	-40 -60 -80 -100		V
Collector-emitter breakdown voltage TIP42 TIP42A TIP42B TIP42C	V(BR)CEO*	I_C= -30mA, I_B=0	-40 -60 -80 -100		V
Emitter-base breakdown voltage	V(BR)EBO	I_E= -1mA, I_C=0	-5		V
Collector cut-off current TIP42 TIP42A TIP42B TIP42C	ICBO	V_CB=-40V, I_E=0 V_CB=-60V, I_E=0 V_CB=-80V, I_E=0 V_CB=-100V, I_E=0		-0.4	mA
Collector cut-off current TIP42/42A TIP42B/42C	ICEO	V_CE= -30V, I_B= 0 V_CE= -60V, I_B= 0		-0.7	mA
Emitter cut-off current	IEBO	V_EB=-5V, I_C=0		-1	mA
DC current gain	hFE(1)	V_CE=-4V, I_C=-0.3A	30
	hFE(2)	V_CE=-4 V, I_C= -3A	15	75
Collector-emitter saturation voltage	VCE(sat)	I_C=-6A, I_B=-0.6A		-1.5	V
Base-emitter voltage	VBE	V_CE=-4V, I_C=-6A		-2	V
Transition frequency	f_T	V_CE=-10V,I_C=-0.5	3		MH_Z

Typical Characterisitics

TIP42C

TO-220-3L Package Outline Dimensions

Product Tags:

general purpose triode

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