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FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance

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Name: FMMT491 High Voltage NPN Power Transistor Low Equivalent On Resistance
Brand: Hua Xuan Yang
Price: 1 USD

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SOT-23 Plastic-Encapsulate Transistors FMMT491 TRANSISTOR (NPN)

FEATURE

Low equivalent on-resistance

Marking :491

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	80	V
VCEO	Collector-Emitter Voltage	60	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current	1	A
ICM	Peak Pulse Current	2	A
PC	Collector Power Dissipation	250	mW
RΘJA	Thermal Resistance From Junction To Ambient	500	℃/W
Tj	Junction Temperature	150	℃
Tstg	Storage Temperature	-55～+150	℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=100μA,I_E=0	80			V
Collector-emitter breakdown voltage	V(BR)CEO1	I_C=10mA,I_B=0	60			V
Emitter-base breakdown voltage	V(BR)EBO	I_E=100μA,I_C=0	5			V
Collector cut-off current	ICBO	V_CB=60V,I_E=0			0.1	μA
Emitter cut-off current	IEBO	V_EB=4V,I_C=0			0.1	μA
DC current gain	hFE(1)	V_CE=5V,I_C=1mA	100
	hFE(2) 1	V_CE=5V,I_C=500mA	100		300
	hFE(3) 1	V_CE=5V,I_C=1A	80
	hFE(4) 1	V_CE=5V,I_C=2A	30
Collector-emitter saturation voltage	VCE(sat)1 1	I_C=500mA,I_B=50mA			0.25	V
	VCE(sat)2 1	I_C=1A,I_B=100mA			0.5	V
Base-emitter saturation voltage	VBE(sat) 1	I_C=1A,I_B=100mA			1.1	V
Base-emitter voltage	1 VBE	V_CE=5V,I_C=1A			1	V
Transition frequency	fT	V_CE=10V,I_C=50mA,,f=100MHz	150			MHz
Collector output capacitance	Cob	V_CB=10V,f=1MHz			10	pF

Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%.

Typical Characterisitics

Package Outline Dimensions

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