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D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching

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Name: D882 Silicon Power Transistor Collector Power Dissipation 05W High Speed Switching
Brand: Hua Xuan Yang
Price: 1 USD

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SOT-89-3L Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN)

FEATURE

Power dissipation

Marking :A94

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	40	V
VCEO	Collector-Emitter Voltage	30	V
VEBO	Emitter-Base Voltage	6	V
I_C	Collector Current -Continuous	3	A
P_C	Collector Power Dissipation	0.5	W
RӨJA	Thermal Resistance from Junction to Ambient	250	℃/W
T_J	Junction Temperature	150	℃
Tstg	Storage Temperature	-55~150	℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C = 100μA, I_E=0	40			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C = 10mA, I_B=0	30			V
Emitter-base breakdown voltage	V(BR)EBO	I_E= 100μA, I_C=0	6			V
Collector cut-off current	ICBO	V_CB= 40V, I_E=0			1	µA
Collector cut-off current	ICEO	V_CE= 30V, I_B=0			10	µA
Emitter cut-off current	IEBO	V_EB= 6V, I_C=0			1	µA
DC current gain	hFE(1)	V_CE=2V, I_C= 1A	60		400
	hFE(2)	V_CE=2V, I_C= 100mA	32
Collector-emitter saturation voltage	VCE(sat)	I_C= 2A, I_B= 0.2 A			0.5	V
Base-emitter saturation voltage	VBE(sat)	I_C= 2A, I_B= 0.2 A			1.5	V
Transition frequency	f_T	V_CE= 5V , Ic=0.1A f =10MHz	50			MHz

CLASSIFICATION OF h_FE(1)

Rank	R	O	Y	GR
Range	60-120	100-200	160-320	200-400

Typical Characteristics

Package Outline Dimensions

SOT-89-3L Suggested Pad Layout

SOT-89-3L Tape and Reel

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