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10N60 K-MTQ High Current Mosfet Switch / 10A 600V Dual Mosfet Switch

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10N60 K-MTQ High Current Mosfet Switch / 10A 600V Dual Mosfet Switch

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Brand Name :	Hua Xuan Yang
Model Number :	10N60
Certification :	RoHS、SGS
Price :	Negotiated
Payment Terms :	L/C T/T Western Union
Supply Ability :	18,000,000PCS / Per Day
Delivery Time :	1 - 2 Weeks

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10N60 K-MTQ High Current Mosfet Switch / 10A 600V Dual Mosfet Switch

10N60 K-MTQ 10A 600VN-CHANNEL POWER MOSFET

DESCRIPTION

The UTC 10N60K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.

10N60 K-MTQ High Current Mosfet Switch / 10A 600V Dual Mosfet Switch

FEATURES

R_DS(ON) < 1.0 Ω @ V_GS = 10 V, I_D = 5.0 A

* Fast switching capability

* Avalanche energy tested

* Improved dv/dt capability, high ruggedness

10N60 K-MTQ High Current Mosfet Switch / 10A 600V Dual Mosfet Switch

ORDERING INFORMATION

Ordering Number		Package	Pin Assignment			Packing
Lead Free	Halogen Free		1	2	3
10N60KL-TF3-T	10N60KG-TF3-T	TO-220F	G	D	S	Tube
10N60KL-TF1-T	10N60KG-TF1-T	TO-220F1	G	D	S	Tube
10N60KL-TF2-T	10N60KG-TF2-T	TO-220F2	G	D	S	Tube

Note: Pin Assignment: G: Gate D: Drain S: Source

10N60 K-MTQ High Current Mosfet Switch / 10A 600V Dual Mosfet Switch

ABSOLUTE MAXIMUM RATINGS (T_C = 25°С, unless otherwise specified)

PARAMETER		SYMBOL	RATINGS	UNIT
Drain-Source Voltage		VDSS	600	V
Gate-Source Voltage		VGSS	±30	V
Continuous Drain Current		I_D	10	A
Pulsed Drain Current (Note 2)		IDM	40	A
Avalanche Current (Note 2)		IAR	8.0	A
Avalanche Energy	Single Pulsed (Note 3)	EAS	365	mJ
Peak Diode Recovery dv/dt (Note 4)		dv/dt	4.5	ns
Power Dissipation	TO-220	P_D	156	W
	TO-220F1		50	W
	TO-220F2		52	W
Junction Temperature		T_J	+150	°C
Storage Temperature		TSTG	-55 ~ +150	°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

4. Repetitive Rating: Pulse width limited by maximum junction temperature.

5. L = 84mH, I_AS =1.4A, V_DD = 50V, R_G = 25 Ω Starting T_J = 25°C

6. I_SD ≤ 2.0A, di/dt ≤200A/μs, V_DD ≤BV_DSS, Starting T_J = 25°C

THERMAL DATA

PARAMETER	SYMBOL	RATING	UNIT
Junction to Ambient	θJA	62.5	°C/W
Junction to Case	θJC	3.2	°C/W

ELECTRICAL CHARACTERISTICS (T_J = 25°С, unless otherwise specified)

PARAMETER		SYMBOL	TEST CONDITIONS	MIN	TYP	MAX	UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage		BVDSS	V_GS = 0V, I_D = 250μA	600			V
Drain-Source Leakage Current		IDSS	V_DS = 600V, V_GS = 0V			10	μA
Gate- Source Leakage Current	Forward	IGSS	V_GS = 30V, V_DS = 0V			100	nA
	Reverse		V_GS = -30V, V_DS = 0V			-100	nA
ON CHARACTERISTICS
Gate Threshold Voltage		VGS(TH)	V_DS = V_GS, I_D = 250μA	2.0		4.0	V
Static Drain-Source On-State Resistance		RDS(ON)	V_GS = 10V, I_D = 5.0A			1.0	Ω
DYNAMIC CHARACTERISTICS
Input Capacitance		CISS	V_DS=25V, V_GS=0V, f=1.0 MHz		1120		pF
Output Capacitance		COSS			120		pF
Reverse Transfer Capacitance		CRSS			13		pF
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)		Q_G	V_DS=50V, I_D=1.3A, I_G=100μA V_GS=10V (Note 1,2)		28		nC
Gate-Source Charge		QGS			8		nC
Gate-Drain Charge		QGD			6		nC
Turn-On Delay Time (Note 1)		tD(ON)	V_DD =30V, I_D =0.5A, R_G =25Ω, V_GS=10V (Note 1,2)		80		ns
Turn-On Rise Time		t_R			89		ns
Turn-Off Delay Time		tD(OFF)			125		ns
Turn-Off Fall Time		t_F			64		ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current		I_S				10	A
Maximum Pulsed Drain-Source Diode Forward Current		ISM				40	A
Drain-Source Diode Forward Voltage (Note 1)		VSD	V_GS = 0 V, I_S = 10 A			1.4	V

Essentially independent of operating temperature.Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.

10N60 K-MTQ High Current Mosfet Switch / 10A 600V Dual Mosfet Switch

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