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AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System

    Buy cheap AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System from wholesalers
     
    Buy cheap AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System from wholesalers
    • Buy cheap AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System from wholesalers
    • Buy cheap AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System from wholesalers
    • Buy cheap AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System from wholesalers

    AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System

    Ask Lasest Price
    Brand Name : Hua Xuan Yang
    Model Number : AP5N10SI
    Certification : RoHS、SGS
    Price : Negotiated
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Delivery Time : 1 - 2 Weeks
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    AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System

    AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System


    N Channel Mosfet Power Transistor Description:


    The AP5N10SI is the single N-Channel logic

    enhancement mode power field effect transistors to

    provide excellent R DS(on), low gate charge and low

    gate resistance. It ’s up to 30V operation voltage is well suited in switching mode power supply, SMPS,

    notebook computer power management and other

    battery powered circuits.


    N Channel Mosfet Power Transistor Features:


    RDS(ON)<125m Ω @VGS=10V (N-Ch)

    RDS(ON)<135mΩ @VGS =4.5V (N-Ch)

    Super high density cell design for extremely low

    RDS(ON) Exceptional on-resistance and maximum DC current


    N Channel Mosfet Power Transistor Applications:


    Switching power supply, SMPS

    Battery Powered System

    DC/DC Converter

    DC/AC Converter

    Load Switch


    Package Marking and Ordering Information


    Product IDPackMarkingQty(PCS)
    AP5N10SISOT89-3AP5N10SI YYWWWW1000

    Table 1.Absolute Maximum Ratings (TA=25)


    SymbolParameterValueUnit
    VDSDrain-Source Voltage (VGS=0V)100V
    VGSGate-Source Voltage (VDS=0V)±25V

    D

    I

    Drain Current-Continuous(Tc=25 ℃)5A
    Drain Current-Continuous(Tc=100 ℃)3.1A
    IDM (pluse)Drain Current-Continuous@ Current-Pulsed (Note 1)20A
    PDMaximum Power Dissipation9.3W
    TJ,TSTGOperating Junction and Storage Temperature Range-55 To 150
    SymbolParameterValueUnit
    VDSDrain-Source Voltage (VGS=0V)100V
    VGSGate-Source Voltage (VDS=0V)±25V

    D

    I

    Drain Current-Continuous(Tc=25 ℃)5A
    Drain Current-Continuous(Tc=100 ℃)3.1A
    IDM (pluse)Drain Current-Continuous@ Current-Pulsed (Note 1)20A
    PDMaximum Power Dissipation9.3W
    TJ,TSTGOperating Junction and Storage Temperature Range-55 To 150

    Table 2.Thermal Characteristic


    SymbolParameterTypValueUnit
    R JAThermal Resistance, Junction-to-Ambient-13.5℃/W

    Table 3. Electrical Characteristics (TA=25unless otherwise noted)


    SymbolParameterConditionsMinTypMaxUnit
    On/Off States
    BVDSSDrain-Source Breakdown VoltageVGS=0V ID=250μA100V
    IDSSZero Gate Voltage Drain CurrentVDS=100V,VGS=0V100μA
    IGSSGate-Body Leakage CurrentVGS=±20V,VDS=0V±100nA
    VGS(th)Gate Threshold VoltageVDS=VGS,ID=250 μA11.53V

    RDS(ON)


    Drain-Source On-State Resistance

    VGS=10V, ID= 10A110125m Ω
    VGS=4.5V, ID=-5A120135m Ω
    Dynamic Characteristics
    CissInput Capacitance

    VDS=25V,VGS=0V, f=1.0MHz

    690pF
    CossOutput Capacitance120pF
    CrssReverse Transfer Capacitance90pF
    Switching Times
    td(on)Turn-on Delay Time11nS

    r

    t

    Turn-on Rise Time7.4nS
    td(off)Turn-Off Delay Time35nS

    f

    t

    Turn-Off Fall Time9.1nS
    QgTotal Gate ChargeVDS=15V,ID=10A V GS=10V15.5nC
    QgsGate-Source Charge3.2nC
    QgdGate-Drain Charge4.7nC
    Source-Drain Diode Characteristics
    ISDSource-Drain Current(Body Diode)20A
    VSDForward on Voltage (Note 1)VGS=0V,IS=2A0.8V

    Reflow Soldering:


    The choice of heating method may be influenced by plastic QFP package). If infrared or vapor phase heating is used and

    the package is not absolutely dry (less than 0.1% moisture content by weight), vaporization of the small amount of moisture

    in them can cause cracking of the plastic body. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C.


    Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stenciling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method.


    Typical reflow peak temperatures range from 215 to 270 °C depending on solder paste material. The top-surface

    temperature of the packages should preferable be kept below 245 °C for thick/large packages (packages with a thickness


    2.5 mm or with a volume 350 mm

    3

    so called thick/large packages). The top-surface temperature of the packages should


    preferable be kept below 260 °C for thin/small packages (packages with a thickness < 2.5 mm and a volume < 350 mm so called thin/small packages).


    StageConditionDuration
    1’st Ram Up Ratemax3.0+/-2 /sec-
    Preheat150 ~20060~180 sec
    2’nd Ram Upmax3.0+/-2 /sec-
    Solder Joint217 above60~150 sec
    Peak Temp260 +0/-520~40 sec
    Ram Down rate6 /sec max-

    Wave Soldering:


    Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems.


    Manual Soldering:


    Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C.

    Quality AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System for sale
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