AP12N10D Power Switch Transistor , Original Silicon Power
Transistor
General Description:
The AP12N10D uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = 100V ID = 5A
RDS(ON) < 140mΩ @ VGS=4.5V
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
| Product ID | Pack | Marking | Qty(PCS) |
| AP12N10D | TO-252 | AP12N10D | 3000 |
Absolute Maximum Ratings at Tj=25℃ unless otherwise noted
| Parameter | Symbol | Value | Unit |
| Drain source voltage | VDS | 100 | V |
| Gate source voltage | VGS | ±20 | V |
| Continuous drain current , TC=25 ℃ | ID | 12 | A |
| Pulsed drain current , T =25 ℃ | ID, pulse | 24 | A |
| Power dissipation , T C=25 ℃ | P D | 17 | W |
| Single pulsed avalanche energy 5) | EAS | 1.2 | mJ |
| Operation and storage temperature | Tstg,Tj | -55 to 150 | ℃ |
| Thermal resistance, junction-case | RθJC | 7.4 | ℃/ W |
| Thermal resistance, junction-ambient4) | RθJA | 62 | ℃/ W |
Electrical Characteristics at Tj=25 ℃ unless otherwise specified
| Symbol | Parameter | Test condition | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-source breakdown voltage | V =0 V, ID=250 μA | 100 | | | V |
| VGS(th) | Gate threshold voltage | V =V , ID=250 μA | 1.2 | 1.5 | 2.5 | V |
| RDS(ON) | Drain-source on-state resistance | VGS=10 V, ID=5 A | | 110 | 140 | mΩ |
| RDS(ON) | Drain-source on-state resistance | V =4.5 V, ID=3 A | | 140 | 180 | mΩ |
IGSS |
Gate-source leakage current | V =20 V | | | 100 |
nA |
| V =-20 V | | | -100 |
| IDSS | Drain-source leakage current | VDS=100 V, VGS=0 V | | | 1 | uA |
| Ciss | Input capacitance | V =0 V, | | 206.1 | | pF |
| Coss | Output capacitance | | 28.9 | | pF |
| Crss | Reverse transfer capacitance | | 1.4 | | pF |
| td(on) | Turn-on delay time | VGS=10 V, VDS=50 V, | | 14.7 | | ns |
| tr | Rise time | | 3.5 | | ns |
| td(off) | Turn-off delay time | | 20.9 | | ns |
t f | Fall time | | 2.7 | | ns |
| Qg | Total gate charge | | | 4.3 | | nC |
| Qgs | Gate-source charge | | 1.5 | | nC |
| Qgd | Gate-drain charge | | 1.1 | | nC |
| Vplateau | Gate plateau voltage | | 5.0 | | V |
| IS | Diode forward current |
VGS<Vth | | | 7 |
A |
| ISP | Pulsed source current | | | 21 |
| VSD | Diode forward voltage | IS=7 A, VGS=0 V | | | 1.0 | V |
t rr | Reverse recovery time | | | 32.1 | | ns |
| Qrr | Reverse recovery charge | | 39.4 | | nC |
| Irrm | Peak reverse recovery current | | 2.1 | | A |
| Symbol | Parameter | Test condition | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-source breakdown voltage | V =0 V, ID=250 μA | 100 | | | V |
| VGS(th) | Gate threshold voltage | V =V , ID=250 μA | 1.2 | 1.5 | 2.5 | V |
| RDS(ON) | Drain-source on-state resistance | VGS=10 V, ID=5 A | | 110 | 140 | mΩ |
| RDS(ON) | Drain-source on-state resistance | V =4.5 V, ID=3 A | | 140 | 180 | mΩ |
IGSS |
Gate-source leakage current | V =20 V | | | 100 |
nA |
| V =-20 V | | | -100 |
| IDSS | Drain-source leakage current | VDS=100 V, VGS=0 V | | | 1 | uA |
| Ciss | Input capacitance | V =0 V, | | 206.1 | | pF |
| Coss | Output capacitance | | 28.9 | | pF |
| Crss | Reverse transfer capacitance | | 1.4 | | pF |
| td(on) | Turn-on delay time | VGS=10 V, VDS=50 V, | | 14.7 | | ns |
| tr | Rise time | | 3.5 | | ns |
| td(off) | Turn-off delay time | | 20.9 | | ns |
t f | Fall time | | 2.7 | | ns |
| Qg | Total gate charge | ID=5 A,
VDS=50 V,
VGS=10 V | | 4.3 | | nC |
| Qgs | Gate-source charge | | 1.5 | | nC |
| Qgd | Gate-drain charge | | 1.1 | | nC |
| Vplateau | Gate plateau voltage | | 5.0 | | V |
| IS | Diode forward current |
VGS<Vth | | | 7 |
A |
| ISP | Pulsed source current | | | 21 |
| VSD | Diode forward voltage | IS=7 A, VGS=0 V | | | 1.0 | V |
t rr | Reverse recovery time | IS=5 A, di/dt=100
A/μs | | 32.1 | | ns |
| Qrr | Reverse recovery charge | | 39.4 | | nC |
| Irrm | Peak reverse recovery current | | 2.1 | | A |
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